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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB509 DESCRIPTION With TO-66 package Complement to type 2SD315 APPLICATIONS For use in audio frequency power amplifier application PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Open emitter Open base Open collector CONDITIONS Collector-base voltage Collector-emitter voltage HAN INC Emitter-base voltage Collector current Collector current-peak Junction temperature Storage temperature SEM GE TC=25ae OND IC TOR UC VALUE -60 -60 -5 -4 -10 35 150 -40~150 ae ae UNIT V V V A A W Collector power dissipation Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB509 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -60 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V VBE Base-emitter on voltage IC=-1A ; VCE=-2V -1.5 V ICBO Collector cut-off current VCB=-20V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 40 320 hFE-2 DC current gain fT Transition frequency D E F 60-120 100-200 IC=-0.1A ; VCE=-2V 40 IC=-0.5A ; VCE=-5V hFE-1 Classifications C 40-80 HAN INC SEM GE 160-320 OND IC TOR UC 8 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB509 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions 3 |
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